| 摘要 |
<p>Process for the production of hybrid circuits with integrated capacitors and resistors in which a thin film of tantalum doped with nitrogen and oxygen is deposited on a substrate, this tantalum film is etched to form a base electrode for the said capacitors and a pattern for the resistors, a mask is placed on the etched film and through the said mask a first anodic oxidation of the tantalum film is performed and at the end of this process a metal coating is deposited and etched in an appropriate manner for forming a second electrode for the capacitors and electrical connections for the system, wherein following the first anodic oxidation a second, more advanced anodic oxidation of the tantalum film is carried out solely at the locations of the resistors in order to selectively reduce the thickness of the tantalum film. The invention also relates to the hybrid circuit with integrated capacitors and resistors obtained by this process.</p> |
