| 摘要 |
PURPOSE:To obtain the photoresist adequate for an exposing with far UV light of <=313nm by using a compsn. contg. a copolymer having the repeating unit expressed by specific formula and a photosensitive agent. CONSTITUTION:The copolymer has the repeating unit expressed by the formula, where R1 denotes H or methyl group; R2 denotes an alkyl group, aralkyl group; R3 denotes H, alkyl group, alkenyl group, aralkyl group, aryl group; m denotes 1 to 6 integer; n1 to n5 denote mol% of respective units; n1=25 to 80; n2=10 to 70, n3=0 to 40; n4=0 to 40; n5=0 to 70. This copolymer is obtd. by bringing prescribed amine and/or alcohol into reaction with, for example, maleic anhydride and styrene. A naphthoquinone diazide compd. is used for the photosensitive agent and dioxane, etc., are used as a solvent. A surfactant, dye, stabilizer and sensitizer are adequately compounded at need with the photosensitive agent. This photoresist compsn. is irradiated with a KrF excimer laser of 248nm in particular. This compsn. allows alkaline development, has high transparency and dry etching resistance and is adequate for production of elements of a very high scale of integration. |
