| 摘要 |
PURPOSE:To enable a semiconductor chip to be impressed with a static or piezoelectric potential by a method wherein the semiconductor chip is formed on an intensive dielectric or an electret. CONSTITUTION:An intensive dielectric 2 such as barium titanate, etc,. is formed on the surface of a metallic substrate 1 and then a semiconductor device chip 3 comprising a MOSFET is formed on the intensive dielectric 2. When the intensive dielectric 2 is positively and negatively polarized to impress the semiconductor chip 3 with inverse bias static potential so that the threshold value voltages in a gate region and a field region of a MOSFET may be controlled to keep these threshold value voltages at a specific high value. Through these procedures, the semiconductor device chip 3 can be impressed with static or piezoelectric potential. |
