| 摘要 |
PURPOSE:To enable the elements to be formed easily and in high reliability by a method wherein insular semiconductor thin film layers are structured to be formed on the lower positions than the surface of an ambient insulating film. CONSTITUTION:Within a semiconductor substrate (SOI substrate) 16 having insular semiconductor thin layers 15 isolated by an insulating film 3, the insular semiconductor thin layers 15 are structured to be formed on the lower positions than the surface of the ambient insulating film (SiO2 film) 3. In order to selectively grind a bonding wafer 12, a grinder with a grinding surface plate bonded with a hard pad or another grinder with a rigid surface plate coated with a soft material containing abrasive grain is used, as for the grinding solution, an alikalic solution is applicable. That is, since the insular semiconductor layers 15 are formed on the lower positions than the surface of the ambient insulating film 3, all the layers 15 can be formed evenly on the whole surface of the wafer 12. Through these procedures, the insular semiconductor thin layers 15 can be formed evenly while the elements can be formed on the layers 15 easily and reliably.
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