发明名称 SEMICONDUCTOR LOGIC CIRCUIT DEVICE OF ELECTROSTATIC INDUCTION TYPE
摘要 PURPOSE:To speed up the operation and also to increase the high frequency performance, by enlarging the variable range of passing current through the reduction in the drain resistance of FET constituting the circuit, by providifng the low specific resistance domain operated as the source domain beneath or at the side surface of the injected domain or the gate domain.
申请公布号 JPS53122381(A) 申请公布日期 1978.10.25
申请号 JP19770037391 申请日期 1977.03.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKANO TAKAO;HORIBA YASUTAKA;TOMIZAWA OSAMU
分类号 H01L29/80;H01L21/8222;H01L27/02;H01L27/06;H03K19/094 主分类号 H01L29/80
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