发明名称 METHOD OF HEAT TREATING SINGLE CRYSTAL
摘要 PURPOSE:In heat treating the single crystal of an oxide obtained by the pulling up method at high temperatures, to fill a space between a vessel accommodating a single crystal mass and the contact surface of the single crystal with the powder of said single crystal to create uniform heat distribution and stress distribution states, thereby preventing the occurrence of cracks.
申请公布号 JPS545900(A) 申请公布日期 1979.01.17
申请号 JP19770070532 申请日期 1977.06.16
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 MATSUMURA SADAO;FUKUDA TSUGUO
分类号 C01G35/00;C01G33/00;C30B29/30;C30B33/00;C30B33/02 主分类号 C01G35/00
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