An electrically pumped vertical cavity laser depends upon reflection as between an unaided distributed Bragg reflector (4) on one side of the cavity and a distributed Bragg reflector (8) supplemented by a metallic reflector (12) on the other. Placement of the shorter supplemented DBR on the p-conductivity type side of the cavity reduces the resistance of the electrical series pump path. Permitted use of an active region (1) of a thickness of 1 mu m or less in the lasing direction results in low lasing threshold. The structural approach is of significance for laser integration in integrated circuits, whether electro-optic or all-optic.
申请公布号
EP0395315(A2)
申请公布日期
1990.10.31
申请号
EP19900304256
申请日期
1990.04.20
申请人
AMERICAN TELEPHONE AND TELEGRAPH COMPANY
发明人
DEPPE, DENNIS G.;FISCHER, RUSSELL J.;HUANG, KAI-FENG;TAI, KUOCHOU