Semiconductor laser using five-element compound semiconductor.

摘要

A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and GaxA l 1-xN (0 </= x </= 1) layers are alternately stacked and each of the GaxA l 1-xN (0 </= x </= 1) layers has a zinc blende type crystal structure, or a GaxA l yB1-x-yNzP1-z (0 </= x, y, z </= 1) mixed crystal layers with a zinc blende type structure a first clad layer (14) of a first conductivity type, an active layer (15), and a second clad layer (16) of a second conductivity type, together constituting a double heterojunction.