Field effect transistors and method of making a field effect transistor.

摘要

A high electron mobility transistor a or metal semiconductor field effect transistor comprising an n<+> type InGaAs layer (26) formed on the upper surface of the device, source and drain electrodes (33, 34) deposited on the n<+> type InGaAs layer (26), said electrodes (33, 34) being made of a metal forming non-alloyed ohmic-contacts with said InGaAs layer (26), a gate electrode (32) also made of said metal, said gate electrode being self-aligned with the source and drain electrodes (33, 34) and separated from said source and drain electrodes (33, 34) by means of L-shaped insulating films.