| 摘要 |
PURPOSE:To obtain the title device in high efficiency by making both the heating temperature for a solid halide material and substrate temperature change faster than the film-forming rate of a single atom layer to effect lamellar separation and formation of the evaporated material to grow a high-quality film. CONSTITUTION:A solid halide material consisting of the constituent elements of a high-temperature oxide superconductor composition is placed in a quartz source chamber 2 within a quartz tube 1, and heated, together with a substrate 5, through a resistance hot oven 3 to effect evaporation. The resultant material thus evaporated is transferred with a carrier gas such as He and reacted with a He-diluted O2 gas to separate out a compound of the above superconductor composition onto the substrate 5. In this case, the temperatures of the solid material and the substrate 5 are respectively controlled through heating sources 6... of said resistance hot oven 3 as well as the infrared rays irradiating via quartz fiber tubes 4. Thereby, the above temperatures are made to change faster than the film-forming rate of a single atom layer to effect lamellar separation and formation of a compound with superconducting phase and a second compound with non-superconducting phase in an alternate manner, thus obtaining the objective superconducting device.
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