| 摘要 |
<p>A plasma etching method comprises the steps of mounting an object (42) to be processed in a region formed between one electrode (30) and the other electrode (10), introducing an etching gas into the region, setting an area of the contact surface of the other electrode (10), which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object (42), generating plasma of the etching gas by applying a predetermined electric power between the electrodes (10, 30) after setting the area of the contact surface of the other electrode (10), which is in contact with the etching gas, to the predetermined value, and etching the object (42) by the plasma.</p> |
