Apparatus for and method of processing a semiconductor device using microwave-generated plasma.

摘要

For greater flexibility in adjusting the radio frequency bias voltage applied to substrate 11 while maintaining a desired floating potential on the substrate, a mixing circuit 41 is used to combine and supply a DC bias voltage (via 32,33) with the RF bias voltage (via 23,20) to the substrate. A synchronising circuit confines generation and supply of the bias voltages to the active portion of each microwave pulse cycle supplied via generator 17 to plasma generating chamber 37 so that plasma is directed to the substrate 11 by a magnetic field produced by solenoid 6 during bias voltage supply to the substrate. In an alternative arrangement which dispenses with the DC bias voltage, the waveform of the RF bias voltage is varied during the active portion of the microwave pulse cycle to instigate desired effects using a high magnitude RF bias voltage confined in time to avoid undesirable side-effects.