Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate,申请号US19890344439-传众专利搜索

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发明名称	Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate
摘要
申请公布号	US4966861(A)	申请公布日期	1990.10.30
申请号	US19890344439	申请日期	1989.04.25
申请人	FUJITSU LIMITED	发明人	MIENO, FUMITAKE;KURITA, KAZUYUKI;NAKAMURA, SHINJI;SHIMIZU, ATUO
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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