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发明名称
Process for producing a SiC semiconductor device
摘要
申请公布号
US4966860(A)
申请公布日期
1990.10.30
申请号
US19880172501
申请日期
1988.03.24
申请人
SHARP KABUSHIKI KAISHA
发明人
SUZUKI, AKIRA;FURUKAWA, KATSUKI
分类号
H01L21/04;H01L29/24
主分类号
H01L21/04
代理机构
代理人
主权项
地址
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