| 摘要 |
PURPOSE: To provide a high performance Schottky contact having low forward resistance, low backward current and high breakdown voltage by providing a prescribed silicon layer and a required contact. CONSTITUTION: On a substrate 11 of an n<+> 6H-αsilicon carbide layer provided with an ohmic contact 13, a Schottky diode 10 is formed by providing the Schottky contact of a platinum contained layer 14 composed of a platinum silicide area 14a and a field plate area 14c through an n<-> epitaxial layer 12. By providing these prescribed silicon layer and platinum contained contact, the Schottky diode of high performance Schottky contact having the low forward resistance, low backward current and high break-down voltage is provided. |
