| 摘要 |
<p>PURPOSE:To relieve or suppress a spot defect by evading a connection between an insulation gate type transistor(TR) for driving which has a characteristic defect or internal short circuit and a pixel electrode. CONSTITUTION:A DC voltage is applied between two signal lines 12(n) and 12(n+2), a DC voltage which turns on the insulation gate type TR 10 sufficiently or a DC voltage which turns off the TR is selected and applied to one scanning line 11(m), and the value of a current which flows between the two signal lines is measured. Then ON/OFF inspection is performed while two insulation gate type TRs 10 in addresses (m,n) and (m,n+1) are connected in series. Then a DC voltage is applied between two signal lines 12(n+1) and 12(n+3) and the value of a flowing current is measured to perform inspection while two insulation gate type TRs 10 in addresses (m,n+1) and (m,n+2) are connected in series. Thus, only normal insulation gate type TRs 10 share the pixel electrode to suppress the occurrence of a spot defect with high accuracy.</p> |
