| 摘要 |
PURPOSE:To prevent the generation of a film cracking by forming a protective film in an atmosphere contg. a rare gas and gaseous N2 by a sputtering method using an alloy target consisting of an element which is lower in specific electric resistivity than Si and the Si as cathode. CONSTITUTION:The alloy target consisting of at least one kind of the elements selected from metal elements, semimetal elements and semiconductor elements lower in the specific electric resistance than the Si and the Si, more preferably the alloy target consisting of the Si and Cr are used as the cathode. The protective film 3 is formed in the gaseous mixture atmosphere contg. at least the rare gas and gaseous N2 by the DC magnetron sputtering method using this target. The adoption of the DC reactive sputtering method which cannot be adopted in the case of using a silicon nitride film is enabled by using the alloy target consisting of the Si-Cr, etc., at the time of forming such protective film e on the substrate 2 or the recording layer 4. The workability in the film formation is thus greatly improved. |
