RESIST PATTERN FORMING METHOD

摘要

PURPOSE:To form a resist pattern having a desired sectional shape by using a chemical amplification type EB resist and repeating a baking and developing plural times after the irradiation of an electron beam (EB). CONSTITUTION:The baking and developing are repeated n(n>=2) times and the baking temp. Tn of the n-th time is set at Tn>Tn-1 at the time of forming the resist pattern 5 by forming the chemical amplification type EB resist film 2' on a substrate 1 and irradiating the resist film 2' with the electron beam 3, then subjecting the film to the baking and developing. The resist pattern 5 having the sectional shape different from the sectional shape of the energy accumulation distribution at the time of the irradiation with the EB is formed in this way.