| 摘要 |
Field programmable device e.g. PROM with memory device including a word line and a bit line has a semiconductor substrate, with high n+ type impurity concn. buried layer, on which a lower impurity n-type Si layer is formed. A diode is formed with a P-type Si layer above and an insulation layer is the n-type Si layer which divides the layer into upper and lower layers forming a capacitor. Isolation region of SiO2 surrounds part of the n-and p-type Si layers and insulation layer. Diode and capacitor are connected in series between word line and bit line.
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