发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce the parasitic resistance value without increasing the area of the power supply wiring part for preventing the erroneous operation due to noise from occurring by a method wherein the thickness of the metallic wirings of a power supply wiring part is made larger than that of the metallic wiring of the other wiring part. CONSTITUTION:The metallic wirings of VCC wiring 5 and GND wiring 6 are made thicker than the metallic wiring of a memory cell array part 2. Since the parasitic resistance of the metallic wirings is inverse proportional to the thickness of the metallic wirings, the parasitic resistance value thereof can be reduced without increasing the area of the power supply wiring part.</p>
申请公布号 JPH02264432(A) 申请公布日期 1990.10.29
申请号 JP19890086004 申请日期 1989.04.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKIHARA YOSHIHIKO
分类号 H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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