发明名称 |
DISPOSITIF POUR FORMER UN CRISTAL DE SEMI-CONDUCTEUR |
摘要 |
In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.
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申请公布号 |
FR2587543(B1) |
申请公布日期 |
1990.10.26 |
申请号 |
FR19850011519 |
申请日期 |
1985.07.26 |
申请人 |
JAPAN RES DEV CORP |
发明人 |
JUNICHI NISHIZAWA, HITOSHI ABE, SOUBEI SUZUKI;ABE HITOSHI;SUZUKI SOUBEI |
分类号 |
H01L21/268;C23C16/48;C30B25/10;C30B25/16;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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