| 摘要 |
PURPOSE:To uniformize the thickness of an insulating film, prevent dielectric breakdown of the insulating film, and protect short circuiting between a word line and a capacitance electrode, by a method wherein the insulating film surrounding a capacitor electrode is formed by combining a thermal oxide film and an insulating film formed by CVD method. CONSTITUTION:By CVD method, a CVD oxide film 8 is grown; then by heat treatment, the CVD oxide film 8 is hardened, by selectively etching the CVD oxide film 8 and an insulating film 5c, a semiconductor substrate 1 is exposed, and an insulating film 9 is formed; next by thermal oxidation, a gate oxide film 6a is formed; a polycrystalline silicon layer is grown on the insulating oxide film 9 and the gate oxide film 6a; by photo etching method, selective etching is performed, and a word line 7a is formed. Thereby a shape wherein the insulating film 9 locally, thinly permeates with distortion is not caused, and short circuiting with etching residue of the word line 7a does not generate. |
