发明名称 BAIASUDENATSUHATSUSEIKAIRO
摘要 <p>PURPOSE:To scale down a chip used for integrating a circuit by obtaining quickly a stable bias voltage under a far low electric power source voltage in response to a control signal. CONSTITUTION:Such condition is considered that the control signal PD is made at '0' level and a transistor 42 is turned on. When the value of the output bias voltage VB is higher than a sum of threshold voltages of transistors 43 and 44, a voltage at a node 46 of the transistors 43 and 44 exceeds the threshold voltage of the transistor 44 or 45. Accordingly the transistor 45 is turned on to drop the output bias voltage VB. Here, if the electric power source voltage VDD is set at least higher than the sum of the threshold voltages of the transistors 43 and 44, the regulated bias voltage VB can be stably outputted.</p>
申请公布号 JPH0249000(B2) 申请公布日期 1990.10.26
申请号 JP19840234609 申请日期 1984.11.07
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 TANAKA SUMIO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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