| 摘要 |
PURPOSE:To prevent the decrease in the characteristics of a semiconductor element by stopping an anisotropic etching in the middle course, remaining a (100) plane of a semiconductor substrate, then forming a dioxidized silicon layer in a low temperature oxidizing atmosphere and forming an impurity region on the bottom of a V-shaped groove. CONSTITUTION:After an n<+> type buried layer 8 is diffused on a p type semiconductor substrate 7, an n type epitaxial layer 9 is grown, an SiO2 film 10 and an Si3N4 film 11 are then deposited, the films 11, 10 to be ion implanted are removed, only the (100) plane surface is etched so that the substrate 7 becomes V-shape, the (100) surface of the substrate 7 remains to some degree, an oxidized film 12 is formed at a temperature lower than the normal, boron ions are implanted only in the (100) surface to form an impurity region 13, polycrystalline silicon is buried in the groove and is flattened. In this manner, parasitic capacity can be reduced, thereby accelerating the switching speed. |
