| 摘要 |
PURPOSE:To easily relieve the stress distortion and reduce variability of element characteristics of an integrated circuit chip so as to obtain a stable semiconductor integrated circuit by sticking the integrated circuit chip on which a plurality of FETs having different gate-width directions are integrated to a package with a thermoplastic substance and, at the same time, heating the chip at a temperature at which the thermoplastic substance softens. CONSTITUTION:After an integrated circuit chip 10 on which a plurality of FETs having different gate-width directions are integrated is formed on a semiconductor substrate, the chip 10 is stuck to a desired position of a package 15 with a thermoplastic substance 11 and, at the same time, heated at a temperature at which the substance 11 softens. For example, a GaAs integrated circuit chip 10 on which a plurality of MESFETs having different gate-width directions are mounted is stuck to a supporting plate 12 fixed to the package 15 in advance with a bonding agent 11 composed principally of a polyimide or epoxy resin. Then terminals of the chip 10 are connected with pins 13 by means of bonding wires 14 and, after their whole bodies are enclosed with a metallic cover 16, the chip 10 is heat-treated at 200-275 deg.C so as to soften the polyimide or epoxy resin. |
