VERFAHREN ZUR SYNTHESE VON BORNITRID DES KUBISCHEN SYSTEMS.
摘要
The present invention is a method of synthesizing crystals of cubic system boron nitride by using a synthesizing vessel divided into a plurality of synthesizing chambers separated by one or more partition layers. This method comprises the steps of: preparing the above stated synthesizing vessel to heat the synthesizing vessel with a temperature gradient in the specified direction, the above stated chambers being placed in order according to the temperature gradient; placing, in the above stated chambers, a plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources according to the temperature gradient; placing the BN sources in contact with portions of the solvents heated at relatively high temperatures in heat treatment and placing at least a seed crystal in each of portions of the solvents heated at relatively low temperatures in the heat treatment; and growing at least a cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel under conditions of ultra-high pressure and high temperature with the above stated temperature gradient.
申请公布号
DE3674329(D1)
申请公布日期
1990.10.25
申请号
DE19863674329
申请日期
1986.09.16
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP
发明人
YAZU, SHUJI C/O ITAMI WORKS OF SUMITOMO E;SUMIYA, HITOSHI C/O ITAMI WORKS OF SUMITOMO;DEGAWA, JUNJI C/O ITAMI WORKS OF SUMITOMO E, ITAMI-SHI HYOGO-KEN, JP