| 摘要 |
<p>PURPOSE:To relieve the picture element defect by the defect of a switching transistor (TR) without lowering the opening rate of the picture element and without increasing the number of stages by connecting adjacent picture element electrodes to each other by the TRs the gate electrodes of which are selection lines. CONSTITUTION:At least the adjacent picture element electrodes 1 are connected by the TR Q the gate electrode of which is the selection line 3 of the one picture element. If, therefore, the switching TR Tr of the other picture element has, for example, an open defect, the image signal impressed to the one picture element electrode 1 is impressed through the TR Q to the other picture element electrode 1 as well when the one picture element is selected via the selection line 3. The image signal is impressed only to the other picture element electrode 1 when the other picture element is selected via the selection line 3. The picture element defects by the defect of the TR Tr are decreased in this way without lowering the opening rate of the picture element and without increasing the number of the stages.</p> |
