| 摘要 |
PURPOSE:To measure the carrier trapping center of a semiconductor material by curtailing the measuring hours by a method wherein data in regard to the semiconductor sample set up in a cryostat are controlled by a main control part, a precontrol part and an analog signal measurement control part to be operationally processed. CONSTITUTION:A semiconductor diode sample 12 intending to measure the carrier trapping center is arranged in a cryostat 11 built in with a heater 13, and the cryostat 11 is connected to an analog signal measurement control part 6, a precontrol part 4 and a main control part 1 in this order. Moreover a thermocouple thermometer 9 and an electrostatic capacity measuring apparatus 10 are provied between the cryostat 11 and the control part 6. The mesuring system is constructed in such a way, voltage pulse signals are applied to the sample 12 according to a digital-to-alanog converter 7 in the contol part 6, and at the same time, the sample 12 is made to the prescribed temperature using the heater 13, and an electrostatic capacity transcient response signal outputted from the sample 12 is sampled by a measuring apparatus 10. After then, the signals thereof are stored to a memory device in the control part 4, and the signals thereof are added to be averaged. |
