Power field effect devices having small cell size and low contact resistance and method of fabrication.

摘要

A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide (158) disposed in intimate contact with the source region (120) of the device. This high conducrivity layer is self-aligned with respect to the aperture in the gate electrode (131) through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metalization (134) and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.