| 摘要 |
PURPOSE:To form a metallic silicide in which a film is not exfoliated during heat treatment by simultaneously coating the surface of a semiconductor substrate heated at a predetermined temperature or higher with Si and a high- melting point low-resistance metal and thermally treating the Si and the metal. CONSTITUTION:An Si wafer 2 is held to a holder 3 in a vessel 1. On the other hand, an Si target 4 and a Ti target 5 are mounted so that the angles of estimate to the wafer 2 equalize. A pair of infrared heaters 7 are set up while being separated from the targets 4, 5 for heating the wafer 2. The wafer 2 is heated at 550 deg.C or higher by using such a device, simultaneously coated with Si and Ti and thermally treated at a temperature such as 800-900 deg.C. Accordingly, the TiSi2 film having low resistivity is formed. The adhesive property of the TiSi2 film is improved through the heating of the substrate, and exfoliation during annealing can be prevented. |
