| 发明名称 |
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| 摘要 |
1. A method of producing nucleate boiling sites on a surface of a silicon semiconductor body for cooling said body by means of a halogenated hydrocarbon cooling fluid, wherein by means of sandblasting the surface of a silicon substrate lattice defects and crystalline damage are made in said surface, characterized in that the lattice defects and crystalline damages are removed by selectively exposing this surface to a silicon etchant. |
| 申请公布号 |
JPS5811101(B2) |
申请公布日期 |
1983.03.01 |
| 申请号 |
JP19780123692 |
申请日期 |
1978.10.09 |
| 申请人 |
INTAANASHONARU BIJINESU MASHIINZU CORP |
发明人 |
RUDORUFU GURUUENSUPAN FURIISAA;MOOTON DEI RIIBAA |
| 分类号 |
H01L23/44;H01L21/304;H01L21/306;H01L21/322;H01L23/427;H05K7/20 |
主分类号 |
H01L23/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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