| 摘要 |
PURPOSE:To obtain a good electric contact in an ultrafine electrode window by opening a window at an interlayer insulating film on aluminum wirings with a CF4 gas containing O2, providing a high melting point metal in the window and heat-treating it. CONSTITUTION:After an SiO2 film 3 and a photoresist film 4 having a window 5 are superposed on the pattern 2 of a thin aluminum film on an Si substrate 1, a window 5 is opened at the film 3 by a reactive sputter etching method of a parallel flat plate with gaseous CF4 containing 2% O2, and Ti 6 is deposited. The mask 4 is removed, aluminum wirings 7 are superposed on the upper layer. Heat treatment is performed in N2 gas, Ti is diffused in aluminum, thereby conducting the wirings. According to this configuration, the photoresist and the reaction product of CF4 gas are not accumulated on aluminum, and a good electric contact can be obtained in the ultrafine electrode window. |
