| 摘要 |
PURPOSE:To increase the surface concn. of Si, and to obtain a uniform and smooth growth layer by regulating the Si concn. in Ga melt on a GaAs single crystal substrate within a specific range and the thickness of the melt to a specified value, and forming an epitaxial layer on the substrate while crystallizing out a GaAs polycrystal on the surface of the Ga melt. CONSTITUTION:An epitaxial growth layer doped with Si is formed on a GaAs single crystal substrate by a slide board method. At that time, the Si concn. in Ga melt on the substrate is regulated to 0.1-0.7wt%, and the thickness of the Ga melt on the substrate to 1-5mm.. And an epitaxial growth layer is formed on the substrate while crystallizing out a GaAs polycrystal on the surface of the Ga melt. A uniform and smooth epitaxial growth layer having high surface concn. of Si can be the most stably obtained. |
