| 摘要 |
PURPOSE:To eliminate the occurrence of malfunction due to short channel effect by increasing the threshold voltage of a transistor (TR) transmitting a word line activating signal to the word line and of a TR resetting an activiating signal level of the word line more than that of other TRs. CONSTITUTION:A word line signal driving circuit consists of TRs Q11-Q12,...Q1n transmitting the activating signal to the word line L1, L2...Ln and a reset circuit resetting the activating signal on the word lines. The threshold voltage of the TRs Q11, Q12,...Q1n, Q21, Q22...Q2n of this circuit is increased more than that of the other TRs. Such defects as the decrease in the ''H'' operatial of the word lines L1, L2 because of the occurrence of the leakage current caused by the short channel effect of the TRs Q11, Q12, Q21 and Q22 or the decrease in the potential of the word line activating signal can be eliminated in the circuit above. |
