| 摘要 |
PURPOSE:To display a low ON resistance which is stable over a wide temperature range by a method wherein a chip-holding means is formed of a plurality of sheets which have been pasted and whose coefficients of thermal expansion are different and a stress by a bimetal effect is exerted on a semiconductor chip at a high temperature. CONSTITUTION:A holding member 15 of a chip 1 is constituted by pasting two metal sheets 15a and 15b whose coefficients of thermal expansion are different. Accordingly, when a temperature is raised, a warp by a bimetal effect is caused at the holding member 15. Since the coefficient of thermal expansion of the metal sheet 15a on the upper side is smaller than that of the metal sheet 15b at the lower side, the holding member 15 is curved by a stress F15 at a high temperature in such a way that a lower-side face to which a molding resin 6 is not supplied protrudes. As a result, a stress F1 to contact a semiconductor chip 1 in the same manner at room temperature acts on the semiconductor chip which has been mounted on the holding member 15; an ON resistance of the semiconductor chip 1 by a piezoresistance effect can be reduced. Thereby, it is possible to obtain a semiconductor device which displays the low ON resistance over a wide temperature range. |
