| 摘要 |
<p>A method of forming a polycrystalline deposit film from a hydrogen gas and a film-forming gas by chemical vapor deposition, which comprises the steps of: exciting the hydrogen gas by contact with an activation energy in a space other than a film-forming space of a film-forming chamber wherein a film-forming base is provided to thereby generate active species (H); introducing the active species (H) and the film-forming gas into the film-forming space at the same time but separate from each other; bringing the active species (H) into contact with the film-forming gas by mixing them in the film-forming chamber to form a plasma region in this chamber kept under a given pressure; and forming a film while periodically varying the density of distribution of the active species (H) near the surface of the base kept at a given temperature.</p> |
