| 摘要 |
The method comprises (a) implanting dopant ions into an Si substrate, (b) forming a field oxide insulating layer having an active area, (c) cleaning the substrate, (d) placing in a reaction chamber, (e) preheating to desorb gas molecules absorbed on the substrate in an H2 ambient, and (f) introducing Si2H6 gas at 30300 Torr while heating the substrate at 780-950 deg.C, to simultaneously form polysilicon and epitaxial Si layers closely and smoothly adjoining each other. It is used for a high speed semiconductor device. The method is inexpensive and simple, reducing the cost of the device. The low temp. prevents high temp. defects occurring. High device integration is possible.
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