| 发明名称 |
METHOD AND DEVICE FOR PLASMA PROCESSING |
| 摘要 |
making a gas plasmatic at reduced pressure, the gas having a critical potential at which an eatching action and a deposition action are in equilibrium; applying an acclerating voltage to the ions in the plasm to cause them to be incident on a sample surface; and changing the accelerating voltage, interposing the critical potential.
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| 申请公布号 |
KR900007687(B1) |
申请公布日期 |
1990.10.18 |
| 申请号 |
KR19870011527 |
申请日期 |
1987.10.17 |
| 申请人 |
HITACHI LTD. |
发明人 |
KAWASAKI YOSINAO;KAWAHARA HIRONOBU;HIROBE KADO;KUDO KATSUYOSHI |
| 分类号 |
H05H1/02;C23C16/517;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 |
主分类号 |
H05H1/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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