MANUFACTURED OF SEMICONDUCTOR DEVICE

摘要

A step (10) in a semiconductor substrate (12) is buried by forming a first film (16) on a lower part and upper part of the step; adding a photoresist layer (20) with equal thickness to the step height on the first film at a portion corresponding to the lowr part of the step; adding a second film (38) on the photoresist layer and first film; adding a planar third film (24); etching away the third and second films; and removing the first film and photoresist layer. Pref. first film is oxide esp. SiO2, second film is a thin oxide layer esp. SiO2, and third film is a photoresist layer.