| 摘要 |
PURPOSE:To obtain a semiconductor water whose gettering effect is high by a method wherein it is cleaned by using a hydrofluoric-acid-based cleaning liquid in a light-shielding state. CONSTITUTION:An SiO2 powder is sprayed on the rear of a semiconductor wafer; as a result, a mechanical strain is caused on the rear of the semiconduc tor wafer; after that, when the semiconductor wafer is cleaned by using a hydrofluoric-acid-based cleaning liquid, the semiconductor wafer is cleaned in a light-shielding state. Thereby the semiconductor wafer whose mechanical strain is large can be obtained; the semiconductor wafer whose gettering effect is high can be formed.
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