| 摘要 |
<p>PURPOSE:To reduce the generation of fine stepped cracks, and to improve yield by bending a semiconductor-laser crystal substrate along the linear edge section of a jig in the direction of cleavage along a cleavage flaw formed on the end face of the substrate and communicating with a rear from a surface. CONSTITUTION:A cleavage flaw 2 communicating with a rear from a surface is shaped to the end face of the crystal substrate 1 of a GaAlAs semiconductor laser, and held and fixed from both surfaces by an extensible sheet 3, the flaw 2 is formed along the linear edge section of a jig 4 along the direction of cleavage of the cleavage flaw 2, and the semiconductor laser crystal substrate 1 is bent vertically in the direction of cleavage. An optical axis is hardly displaced in a semiconductor laser chip acquired in this manner, and the displacement of the optical axis is concentrated near a central optical axis. Accordingly, fine stepped cracks are drastically reduced, thus improving characteristics.</p> |
