Method of filling with a metal layer a recess formed in an integrated circuit chip.

摘要

By a method of fabricating an integrated circuit chip including insulated gate field effect transistors, a recess (106) may be formed in the chip under a photoresist layer (102) such that the photoresist overhangs the recess. A metal film (110) is cold-sputtered, filling the recess and covering the photoresist. The metal film in the recess (110) is separated from the metal film (112) covering the recess because of the overhang. A second photoresist layer (114) is applied, then etched to expose a corner of the metal film over the overhang. The metal is etched to expose the underlying photoresist (102). Finally the underlying photoresist (102), and the portion of the second photoresist layer (114) over the metal film (110) in the recess, are removed.