| 摘要 |
PURPOSE:To reduce a leakage current flowing through a buried region to obtain high output by effectively making junction to be formed of a current block layer and a current confinement layer into a reverse bias state. CONSTITUTION:A p-type lower part clad layer 2, an active layer 3, an n-type upper part clad layer 4, an n-type cap layer 5, an n-type current block layer 6 and a p-type current confinement layer 7 are provided on a p-type substrate 1. Then, luminous operation is performed by a bias to be impressed between the first and second electrodes 15a and 16, while a third electrode 15a connecting to a p-type region 7 forming the n1-p2 in the n1p2n3p lamination of a course reaching a lower part layer 2 from a cap region 5 through the buried regions 7 and 6 through the ohmic property or the Schottky barrier property and a fourth electrode 15b connecting to an n-type region 6 forming the n3p junction through the ohmic property or the Schottky barrier property are arranged. Thereby, a leakage current is reduced while improving output. |
