Semiconductor device having CCD and its peripheral bipolar tranlators and method of manufacturing the same.

摘要

In a semiconductor device, a charge transfer device (200), a bipolar transistor (100), and a MOSFET (300) are formed on a single chip, and the peripheral portion of the charge transfer device (200) is surrounded by an N<+>-type region (6a, 6b). Since the charge transfer device block (200) is surrounded by the N<+>-type region (6a, 6b) and the N<+>-type buried layer (2), leaked charge of clocks from the charge transfer device is absorbed by the N<+>-type region and the N<+>-type buried layer.