| 摘要 |
<p>A static memory in which polysilicon thin film transistors (Q4; Q6) serve as load elements in a memory cell, and the gate electrodes (16; 18) of the polysilicon thin film transistors (Q4; Q6) are formed of diffusion regions. In the static memory, high quality uniform TFTs are formed, and the oxidation films of the TFTs can be thin, without using a complex manufacturing technique.</p> |
