| 摘要 |
MULTILAYER CONTACT STRUCTURE A method for forming a contact structure on a silicon surface comprises forming a TiSi2 layer in intimate contact with the silicon surface and a TiNxOy layer overlying the TiSi2 layer, and forming an Al alloy layer on the TiNxOy layer. The TiSi2 layer provides a good electrical contact to the silicon surface, the Al alloy layer reduces the contact resistance, and the TiNxOy layer provides a diffusion barrier to prevent interaction of the Al alloy and TiSi2 which could degrade the contact. |
