Semiconductor device having level shift diode,申请号US19890398281-传众专利搜索

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发明名称	Semiconductor device having level shift diode
摘要
申请公布号	US4963948(A)	申请公布日期	1990.10.16
申请号	US19890398281	申请日期	1989.08.22
申请人	FUJITSU LIMITED	发明人	AWANO, YUJI
分类号	H01L29/86;H01L21/338;H01L27/06;H01L29/201;H01L29/778;H01L29/812;H01L29/861	主分类号	H01L29/86
代理机构		代理人
主权项
地址

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