发明名称 Method for producing hybrid integrated circuit substrate
摘要 A method for producing a high density hybrid integrated circuit substrate capable of forming a very fine pattern of a conductor by means of the chemical plating and at the same time capable of applying the chemical plating, while protecting the resistor formed on the substrate in advance of the chemical plating step, the production method comprising steps of: forming a resistor on an electrically insulating substrate; forming an activating layer for depositing a chemical plating on the electrically insulating substrate in contact with the resistor; forming a stable resin layer, during the chemical plating step, by the photolithography process in a manner to cover the resistor, except for the portion of the activating layer where an electrically conductive layer is to be formed; and forming the electrically conductive layer by the chemical plating on the exposed portion of the activating layer.
申请公布号 US4963389(A) 申请公布日期 1990.10.16
申请号 US19890294990 申请日期 1989.01.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAKADA, MITSUYUKI;TSUKAO, RYUSAKU;TAKASAGO, HAYATO
分类号 H01L21/48;H01L21/70;H01L27/01;H05K1/16;H05K3/18 主分类号 H01L21/48
代理机构 代理人
主权项
地址