| 摘要 |
PURPOSE:To uniformly supply a vaporized organometallic compd. even on a large-area substrate with good reproducibility and working safety by heating the compd. to a fixed temp. and supplying a fixed value of the vaporized compd. having a fixed vapor pressure onto the substrate surface placed in the heated and reduced-pressure atmosphere. CONSTITUTION:A cylinder vessel 20 is heated to a fixed temp. by an air thermostatic bath 24, and an air thermostatic bath 25 is kept at a slightly higher temp. A substrate 13 is placed in a crystal growth furnace 11 and heated to a specified temp. by a heater 12, and the furnace is evacuated by a vacuum pump 14. As the vessel 20 is heated, the organometallic compd. 2 which is solid at ordinary temp. begins to vaporize, and a pneumatic inlet and outlet valve 21 and a supply stopping valve 23 are opened. The vaporized compd. 26 is introduced into a mass-flow controller 22, the mass flow rate is directly measured and adjusted to a fixed value, the vaporized compd. is supplied to the furnace 11, and the epitaxial thin film of a compd. semiconductor is formed on the substrate 13. By this method, the amt. of the vaporized compd. 26 is controlled to a fixed value at all times, the compd. 26 need not be powdered, and hence the contamination by the powdery compd. 26 in the packing operation is prevented. |
