发明名称 |
Lateral insulated gate bipolar transistors with improved latch-up immunity |
摘要 |
The present invention relates generally to insulated gate transistors and more particularly, to laterally implemented insulated gate transistors having improved current capacity and improved immunity to latch-up. Specifically, it has been found that a lateral insulated gate transistor fabricated on a heavily doped substrate such as a p+ substrate exhibits improved current density. Further, the inclusion of an additional heavily doped region such as a P+ region proximate the base region contributes to improved latch-up immunity within the device.
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申请公布号 |
US4963951(A) |
申请公布日期 |
1990.10.16 |
申请号 |
US19850803049 |
申请日期 |
1985.11.29 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ADLER, MICHAEL S.;PATTANAYAK, DEVA N. |
分类号 |
H01L29/78;H01L29/10;H01L29/417;H01L29/423;H01L29/739;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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